Research Associate in Growth and Characterisation of III/V Quantum Dot Devices

The University of Sheffield has a world-wide reputation for excellence in semiconductor research. Major facilities and research grants are hosted in both the department of Electronic and Electrical Engineering and in the department of Physics. We have large programmes of research in semiconductor Quantum Technologies, Photonics, Electronics, Semiconductor Epitaxy, and novel materials. The University is also host to the National Centre for III-V Technologies, which includes the largest concentration of Molecular Beam Epitaxy (MBE) and Chemical Vapour Deposition (CVD) equipment in the UK for creating new semiconductor materials and devices such as lasers, solar cells, transistors and quantum devices (http://www.epsrciii-vcentre.com).

The successful candidate will work in the Semiconductor Materials and Devices group (SMD) of the Department of EEE and will carry out research and development of site-controlled quantum dot devices. (http://www.sheffield.ac.uk/eee). The work will involve preparation of ordered arrays of nanohole templates via electron beam lithography and etching (or other novel nano-patterning techniques developed during the project). Subsequent growth of InAs self-assembled quantum dot (QD) devices using Molecular Beam Epitaxy and characterisation of these devices using micro-photoluminescence and atomic force microscopy. Integration of high optical quality positioned QDs into waveguides and other photonic circuits is one of the major objectives of the project as a whole, which is a collaboration between the Physics and EEE departments in Sheffield. Candidates must hold a PhD in either III-V epitaxial growth or photonic device fabrication or possess equivalent experience in the semiconductor industry. The person will be highly motivated, having the required skills to capture and push beyond the current state of the art.