PhD Studentship: Development of CMOS compatible non-volatile resistive memories

Location
United Kingdom
Posted
Jan 16, 2017
Closes
Jan 13, 2018
Organization Type
University and College
Hours
Full Time
PhD Studentship: Development of CMOS compatible non-volatile resistive memories

Engineering Mats & Surface Engineerg Gp

Location: Highfield Campus

Closing Date:  Saturday 13 January 2018

Reference: 826017BX

Project Reference: EngSci-MATS-143

Continuing transistor downscaling has led to a range of limitation and intrinsic constrains for transistor based memories. Non-volatile Resistance memory (RM), also known as programmable metallization cell and/or redox memory, promises great potential to replace conventional flash memories and RAM in the near future. RMs usually have simple metal-solid electrolyte-metal stack structures and on/off states are distinguished by stable low/high resistance electrically achieved between the metal electrodes. Key advantages of RMs include low power and fast speed operation and high scalability, making it the most promising candidate for future universal memory. In consideration of future highly constrained computing application, it is important to integrate RMs and future CMOS based logic circuits. Despite a recent surge of research in RM developing field, RMs that utilize main stream CMOS compatible materials are yet to be developed.

This project aims at development of such resistance memories using CMOS compatible metal and dielectric materials and at the same time ensuring the achievement of high memory performance such as high ON/OFF ratio. This project will involve thin film electronic material characterization as well as RM device design, fabrication and testing. The results also underline the studies of relevant resistive switching mechanisms. The PhD student will be able to exploit the extensive material and device expertise as well as the state-of-the-art cleanroom facilities at the University of Southampton. Applicants with backgrounds/experience in general electrical engineering, microelectronics, semi conductive devices, electronic materials, and micro/nano-fabrications will be particularly relevant. Successful applicants should hold degrees equivalent to UK 2:1 or 1st class honours.

If you wish to discuss any details of the project informally, please contact Prof. Liudi Jiang, Engineering Materials Research group, Email: L.Jiang@soton.ac.uk, Tel: +44 (0) 2380 59 8748.

Further details:

  • Job Description and Person Specification