Ph.D. Position in Electrochemistry/Materials Science - Electrochemical Silicon Nanoprocessing for W

Silicon micro- and nanostructuration is of crucial importance for microelectronics, solar cells and for promising emerging technologies in biosensing devices and water splitting cells. These applications make the fabrication of Si nanostructured arrays a very hot topic that has attracted tremendous attention. In this context, electrochemistry is very attractive for manufacturing such arrays.
 
We are looking for a highly motivated Ph.D. candidate to work on a 3-year project at the ISCR (Institut des Sciences Chimiques de Rennes), located at the University of Rennes in France. The research project is focused on the development of silicon structuration processes for the fabrication of functional surfaces. More specifically, the candidate will use electrochemical techniques such as photoelectrochemical etching and nano-electrodeposition in order to fabricate silicon nanostructure arrays. She/He will then functionalize these surfaces with redox active molecules or catalytic materials and study their physical-chemical and photoelectrochemical properties.
The project duration is 3 years and the funding is provided by the ANR (Agence Nationale de la Recherche). The successful candidate will have an access to the equipment present at the ISCR (scanning probe microscopy, electron microscopy, potentiostats, ellipsometer, FTIR, XRD…) and to the clean room facilities located at the IETR (Institut d’Electronique et de Télécommunication de Rennes), that is located very close to the ISCR.
The candidate must have a strong background in physical chemistry and/or materials science and an interest for electrochemistry. A strong motivation for research and good communication skills are required (fluent English or French speaking is mandatory).
 
References:
G. Loget, B. Fabre, S. Fryars, C. Mériadec, S. Ababou-Girard, ACS Energy Lett. 2017, 2, 569-573.
T. G. Truong, C. Mériadec, B. Fabre, J.-F. Bergamini, O. De Sagazan, S. Ababou-Girard, G. Loget Nanoscale, 2017, 9, 1799-1804
L. Santinacci, M. Diouf, M. Barr, B. Fabre, L. Joanny, F. Gouttefangeas, G. Loget ACS Appl. Mater. Interfaces 2016, 8, 24810-24818
K. Cho, G. Loget, R. M. Corn. J. Phys. Chem. C 2014, 118, 28993-29000
G. Loget, R. M. Corn, Chem. Eur. J., 2014, 20, 10802-10810
 
Contacts:
Please send your records (CV + letters of recommendation) to:
Gabriel Loget: gabriel.loget@univ-rennes1.fr
Bruno Fabre: fabre@univ-rennes1.fr