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Research Associate in III-nitride semiconductors and devices

Employer
Global Academy Jobs
Location
United Kingdom
Closing date
Nov 3, 2016

Job Details

The Department of Electronic and Electrical Engineering is respected internationally for the important contributions it makes in this field.

It has the second highest research income in the UK in this subject area. #

We are a vibrant community of 40 academic staff, 48 research staff, 25 technical staff, 23 administrative staff and over 750 undergraduate and postgraduate students.

The Department is organised into three research groups: Communications and Imaging, Electrical Machines and Drives and Semiconductor Materials and Devices.

  • For further information about the Department of Electronic and Electrical Engineering go to: www.shef.ac.uk/eee The post is based within the Centre for GaN Materials and Devices (http://gancentre.group.shef.ac.uk/).
  • The Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
  • The post holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve III-nitride and other III-Vs integrated materials and devices on patterned substrates using advanced MOVPE overgrowth technique, which will be characterized by a number of advanced optical/electrical and structural systems.
  • She/he will need to prepare and present results regularly, and will help to co-ordinate progress meetings.
  • She/he will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
  • Candidates are sought who have a strong scientific background in III-nitride based semiconductor physics and fundamental semiconductor physics, with a PhD in semiconductor materials and device fabrication or equivalent experience.
  • Experience in structural and optical characterisation of III-nitride semiconductors and skill in advanced MOVPE overgrowth on patterned substrates is also essential. This post is fixed term until 31st March 2020.

Company

Global Academy Jobs works with over 250 universities worldwide to promote academic mobility and international research collaboration. Global problems need international solutions. Our jobs board and emails reach the academics and researchers who can help.

"The globalisation of higher education continues apace, driving in turn the ongoing development of the global knowledge economy, striving for solutions to the world’s problems and educating a next generation of leaders and contributors."

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